Articles about Mram


Everspin's Friday IPO goes pop: Moderate amount of champagne all 'round

Everspin has spun out its IPO; it offered 5 million shares at an estimated $8 a pop to rake in an estimated $40m, with shares starting trading on Friday October 7, opening at $9.10 and currently trading at $8.02. Not a disaster then. The magneto-resistive RAM startup has pulled in total funding of $80.3m since it was founded …
Chris Mellor, 10 Oct 2016
Curser icon over a news paper folded

More 20nm MRAM

Spin Transfer Technologies (STT) has fabricated perpendicular MRAM magnetic tunnel junctions (MTJs) at the 20nm size. The startup, a competitor to EverSpin, is developing Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), MRAM chips with MTJs as the primary component. STT has moved its MRAM …
Chris Mellor, 29 Sep 2016

Fresh-faced startup promises bigger, faster non-volatile DIMMs

Early-stage startup Xitore says it is developing bigger and faster non-volatile flash DIMMs to give servers a performance boost so they could run more VMs and containers and run them faster by sidestepping high latency storage IOS. It is taking up the baton brought onto the field by Netlist and Diablo Technologies and …
Chris Mellor, 28 Sep 2016
still of Ian McKellan as magneto in the x-men movie

Magneto-resistant upstart Everspin gets itself into an IPO whizz

MRAM startup Everspin has filed for an IPO. Everspin_ST-MRAM_die Everspin MRAM die Magneto-resistive or Magnetic Random-Access Memory (MRAM) is non-volatile RAM that’s faster than NAND; think of it roughly as XPoint-class stuff. It’s been used by server and system vendors for niche needs requiring very fast and non- …
Chris Mellor, 21 Sep 2016
Swedish eggs and meat dish - pyttipanna

Intel overhyping flash-killer XPoint? Shocked, we're totally shocked

+Comment XPoint will substantially undershoot the 1,000-times-faster and 1,000-times-longer-lived-than-flash claims made by Intel when it was first announced – with just a 10-times speed boost and 2.5-times longer endurance in reality. This became clear when Micron presented details of its QuantX-branded XPoint memory technology at the …
Chris Mellor, 12 Aug 2016

Ballsup helps Toshiba double tablet SSD capacity

Toshiba has produced a tiny but bigger SSD for tablets and ultrathins by adding TLC 3D NAND to its BG1 SSD card product line, and doubling its capacity. The BG1 was introduced in August 2015 as a 256GB NVMe M.2 product. This product had an edge connector and was inserted into a socket. The actual chip was affixed to the M.2 …
Chris Mellor, 04 Aug 2016
Everspin's perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM

Non-volatile MRAM coming to servers in early 2017

Non-volatile RAM outfit Everspin says it's almost ready to ship non-volatile 256-megabit DDR3 chips and expects they'll soon find a home in your next server or array. 256 megabits is just 32 megabytes, which doesn't sound worthy of a DIMM slot even if, as Everspin claims, its kit can sustain writes 100,000 times faster than is …
Simon Sharwood, 04 Aug 2016

Just the facts, STT-MRAM: Your DRAM replacement's on its way

Spin Transfer-Torque Magnetic RAM (STT-MRAM) is a future DRAM replacement candidate. It uses one of two different spin directions of electrons to signal a binary one or zero. IBM and Samsung scientists have published an IEEE paper* demonstrating switching MRAM cells for 655 devices with diameters ranging from 50 down to 11 …
Chris Mellor, 07 Jul 2016

Magnetic memory boffins unveil six-state storage design

Memory could be getting an upgrade beyond the two states used in binary, as researchers have designed a magnetic element with six stable magnetic states, according to a paper published in Applied Physics Letters. The researchers from Bar-Ilan University in Israel and New York University in the US found that by arranging a …
Katyanna Quach, 18 May 2016
Everspin MRAM

Storage-class memory just got big – 256Mbit big, at least

Persistent storage that's just about as fast as RAM is widely held to be a year or three away from giving the server and storage industries a generational shakeup, and that change is now rather closer after US outfit Everspin started shipping samples of 256Mb Magnetoresistive random-access memory (MRAM). MRAM looks like DDR3 …
Simon Sharwood, 14 Apr 2016

Presenting Mangstor's NVMe superfast flash storage pocket rocket

Comment The Register storage desk thinks NVMe fabric linking for storage arrays will be very big, as it's a SAN/NAS latency killer. Startup Mangstor has built an NVMe fabric-accessed array, so we've seen what such a beast looks like. We looked at its MX6300 PCIe flash card recently and thought it was a marvelously fast product. We …
Chris Mellor, 08 Sep 2015

Filling the void between fast/expensive DRAM and slow/cheaper flash

The AupM001 storage module is made of ST-MRAM (Spin Torque Magnetic RAM) which combines DRAM speed with non-volatility and an interface compatible with DDR3 SDRAM. IT is a candidate tech to fill the void between fast, expensive and volatile DRAM on the one hand, and slow, cheaper, and persistent flash on the other. Intel and …
Chris Mellor, 17 Aug 2015

XPoint memory ruminations: Expert says it's not PCM

Comment A presentation at the Flash Memory Summit contained speculation about Intel/Micron’s 3D XPoint memory – what it is and how Intel might use it. We’ve tested some of its contents with a knowledgeable industry expert and can cast a little more light, hopefully, on what it is and where it’s going. The Thursday August 13 …
Chris Mellor, 17 Aug 2015

Peering closer at 3D XPoint memory: What are Intel, Micron up to?

Analysis Asking what we know about Intel/Micron's XPoint memory announced yesterday is maybe the wrong question. What don't we know about it? Here are a few mysteries: Is the technology patented? Have developers kept quiet for 10 years? What is the memory cell material? What is their selector material? What is the process used to …
Chris Mellor, 29 Jul 2015

It's all downhill from here: Avalanche spins STT-RAM

Startup Avalanche is sampling an STT-RAM chip offering DRAM/SRAM speed, persistent storage, unlimited endurance and scalability beyond 10nm. The holy unified memory chip grail is to replace DRAM, SRAM and flash with a single chip tech, offering the benefits of each without the drawbacks. Thus NAND cannot scale down psst 10nm and …
Chris Mellor, 01 Jul 2015
A soldier aims an XM-25 smartgun. Credit: PEO Soldier

Cheeky upstart Mangstor hungrily eyes Fusion-io's pots of gold

Developer of flash storage solutions and startup Mangstor is developing PCIe flash cards usable both as direct and shared flash storage, with figures indicating SanDisk has some work to do if it wants to return Fusion-io to the top of the performance tree. The base MX6300 flash card technology uses non-volatile Everspin ST-MRAM …
Chris Mellor, 22 Jun 2015
True 3D Technology

A day may come when flash memory is USELESS. But today is not that day

The era of flash memory is anticipated to run out of road in the 2020s and newer technologies involving resistance and electron spin are poised to take over, delivering higher capacities, greater speed and DRAM-style addressability. Some people ask if one of these new technologies could actually unify dynamic memory (RAM) and …
Chris Mellor, 18 Mar 2015
Spooky angel doll

Crossbar says it's 'one step' from delivering miracle RRAM

Crossbar has jumped a hurdle limiting the readability if its resistive RAM non-volatile memory tech and says commercialisation is getting closer. Crossbar's resistive RAM (RRAM) tech is a 3D semi-conductor structure promising higher densities and faster access than NAND; closer to the fabled uniform memory that's as fast as …
Chris Mellor, 18 Dec 2014
Flash Gordon

Life after server-side flash: What comes next?

Flash suffers from a steadily shorter working life, slower access speed and shorter working life the smaller the actual cells the NAND become. It’s generally reckoned that the scaling wall will be hit attempting to shrink cell size beyond 16nm. At that point, to continue increasing non-volatile memory capacity without increasing …
Dave Cartwright, 26 Sep 2014
Stuart Parkin of IBM

Brit IBM prof gets life-changing 'Tech Nobel' for work in spintronics

A Brit boffin at IBM’s Almaden Research Centre has won a Finnish prize for spintronics research which led to a thousandfold increase in disk capacity. The €1m (£824,400) Millennium Technology prize has been awarded by the Technology Academy of Finland to Stuart Parkin, an IBM Fellow at Almaden where he manages the …
Chris Mellor, 09 Apr 2014

US and Japanese chip firms team up on MRAM project

A group of over 20 Japanese and US chip companies are joining forces to develop a way to mass produce new low power memory chips that operate ten times faster than DRAM. Firms including Micron Technology – the world’s number two DRAM producer – Renesas, Hitachi and Tokyo Electron will send experts to Tohoku university to begin …
Phil Muncaster, 26 Nov 2013
The Register breaking news

US spies' crazytech branch asks chip firm for 8-BIT-PER-CELL memory

The blue-sky researchers who work for the US intelligence branch have handed a contract to magnetic semiconductor firm Crocus Technology to develop memory that stores a whopping 8-bit-per cell memory to help keep the United States' intel secure. IARPA, the US Intelligence Advanced Research Projects Activity, has commissioned …
Chris Mellor, 10 Apr 2013
Mercedes Gull-wing car

STEC's flash daddy on SSD rivals, NAND and having your OWN controller tech

Mark Moshayedi, CEO of flash pioneer STEC, doesn't think "flash is forever". While his firm is now battling it out in the enterprise solid state drive space, he has a different vision for the future. El Reg storage desk recently met with Moshayedi, where he expanded on the firm's current strategies and explained how it had saved …
Chris Mellor, 16 Jan 2013

Big Data storage of the future: Fat spinning tubs smothered in NVRAM gravy

Jean-Luc Chatelain, EVP of one of the major high capacity storage firms, says he sees storage tiers collapsing, leaving only server non volatile memory (NVRAM) and massively fat spinning data tubs of up to 64TB and rendering tape irrelevant. But how do we get to this point? Chatelain - aka JLC - is the exec who heads up strategy …
Chris Mellor, 13 Dec 2012

Toshiba reveals spin transfer RAM

Toshiba has revealed it has developed a model for transfer torque magnetoresistive random access memory (STT-MRAM)  and has claimed it has, for the first time, beaten the power requirements of static random-access memory (SRAM). STT-MRAM has been on memory-makers' radar for a few years, and works by imparting spin – the angular …
Simon Sharwood, 11 Dec 2012
Tower Blocks

The 3D die stack tack: Toshiba builds towering column of flash

Toshiba is building high rise flash and ReRAM chips, with prototypes coming next year and volume shipping in 2015. The idea of high-rise or 3D chips is that we can sidestep limitations on increasing the storage density of flash or memory chips by stacking them one on top of the other, increasing the storage density on a Mbits/ …
Chris Mellor, 15 Oct 2012

Intel cashes in its chips with Micron, bets on post-flash riches

Intel is flogging some its flash foundry capacity in its IMTF joint venture to Micron, its partner in their manufacturing love-in. Chipzilla is selling its stake in two IMTF wafer plants to Micron for $300m cash and a $300m amount held by Micron to pay for future NAND supplies from the plants or to be refunded as cash. Intel …
Chris Mellor, 02 Mar 2012

Upstart startup STT punts big on universal memory

VCs are funding resistive RAM startup Spin Transfer Technologies to the tune of 36 million greenbacks so it can start creating its universal memory – combining DRAM speed, flash non-volatility, and breaking NAND scaling limits. Spin Transfer Technologies (STT) was actually started in 2007 by New York University and Allied …
Chris Mellor, 20 Feb 2012

Elpida denies half-a-BEEELLION-dollar Micron buy-in

Speculation, reports and rumour are swirling around Elpida like leaks from a failing US primary candidate's campaign room. The latest has Micron Technology spending half a billion bucks to buy into Elpida while that company announces its first Resistance RAM chip; proving its worth so to speak. The DRAM market is over-subscribed …
Chris Mellor, 30 Jan 2012

Dell and LSI now sporting impressive new set of MRAMs

Dell and LSI are using a new type of memory in servers, RAID controllers and routers, presaging the replacement of NAND flash. It is a form of non-volatile memory called MRAM for Magnetic RAM. MRAM has been in development for some time and is now being used for journal memory functions by Dell and LSI, according to Everspin …
Chris Mellor, 23 Jan 2012

Inventor flames Reg, HP in memristor brouhaha

Here is some Christmas holiday reading. HP's claim that RRAM, PCM, and MRAM are all memristor technologies is bullshit, the memristor is not a fourth fundamental circuit element, HP didn't find it, and its developing memristor product is a not a memristor - really. The flame from Blaise So says ex-USPTO patent examiner and …
Chris Mellor, 27 Dec 2011

IBM unveils high-capacity, high-speed storage chippery

IBM has scored a blow in the high-stakes prizefight for the title of next-generation non-volatile memory technology, revealing a prototype "racetrack memory" chip baked using the same silicon fab technologies as run-of-the-mill chippery. Racetrack memory, for those of you who haven't been scoring at home, is competing with …
Rik Myslewski, 06 Dec 2011
hands waving dollar bills in the air

Micron's glass memory monster chews up slowcoach flash

Micron has demonstrated Phase-Change Memory (PCM), enabling an app to run around 50 times faster than it would on NOR memory. PCM is a post-NAND and post-NOR contender in the non-volatile memory arena; it's said to combine the speed and simple data access of DRAM and the non-volatility of NAND and NOR flash memory. It stores …
Chris Mellor, 02 Dec 2011


Micron is getting into a spin over STT-MRAM and getting into bed with a Singaporean research institute to develop it. The background is that NAND is facing increasing problems over write endurance and write power as the process size reduces from 29-20nm to 19-10nm ... and then below 10nm. The problem is exacerbated as bits are …
Chris Mellor, 01 Nov 2011
The Register breaking news


As you probably know, heat is one of the enemies of electronics, and heat management is a major design constraint of microelectronics. Now, a German research group has demonstrated using waste heat to get electricity. No, we’re not really talking about perpetual motion here. What the researchers have observed is that in …

What flash needs is a little TLC

Comment The breakthrough when flash becomes affordable is thought by many people to be TLC (triple-level cell) – 3-bit multi-level cell NAND – which adds a third more capacity to flash cells. But how far are we with TLC implementation, and when will we see it in mainstream IT? According to Jim Handy of Objective Analysis, SanDisk is the …
Chris Mellor, 25 Oct 2011

HP and Hynix to produce the memristor goods by 2013

An HP/Hynix memristor product should be here in 18 months – and PCM, MRAM and RRAM are all memristor-type technologies... As reported by EETimes, this came out at the International Electronics Forum in Seville, in a presentation by Stan Williams, a senior HP Labs Fellow. The report quotes Williams saying: "We have a lot of …
Chris Mellor, 10 Oct 2011
hands waving dollar bills in the air

IBM attracts Crocus to magnetic RAM biz

IBM has drafted in Crocus Technology in hope of blossoming its long-running MRAM flash follow-on technology effort. Where this leaves Big Blue's racetrack memory effort is unclear. Crocus Technology is a developer of magnetoresistive memory and has devised a thermally-assisted Magnetic Logic Unit (MLU), which caught IBM's eye …
Chris Mellor, 07 Oct 2011

Samsung dives into spin-transfer torque

Samsung is going to walk the spin-transfer torque by buying Grandis, and will use its capabilities to develop next-generation memory. Spin-transfer torque RAM (STT-RAM) is characterised as having "a spin-polarised current in a tunnel magneto resistance element. Normally an electric current is not polarised as half its electrons …
Chris Mellor, 03 Aug 2011
server room

Hitachi GST SVP takes a punt on STT-RAM

The general manager and VP of Engineering at Hitachi GST has left to join a NAND and DRAM replacement technology company, Grandis. That seems like a risky move. Said GM and VP Mohamad Krounbi is joining Grandis to be its SVP for engineering, taking on responsibility for "all STT-RAM technology and product development at Grandis …
Chris Mellor, 26 Jul 2010
SGI logo hardware close-up

NEC fumbles towards MRAM flip-flop

NEC has made more progress in its development of a flip-flop switch for system-on-chips that offers near zero electricity use in standby states by using magnetic RAM technology. Magnetic RAM uses the direction of a magnetic field in a memory cell to indicate a binary one or zero, and is one of the candidates posited to succeed …
Chris Mellor, 27 Jul 2009

CMOx shows its face in flash race

Heard of CMOx? Here we are in the midst of a rush towards NAND flash replacing fast hard drives and successor technologies are already jostling for prominence. Unity Semiconductor came out of stealth last month and has unveiled its CMOx technology with claimed technology advantages over NAND and manufacturing advantages over …
Chris Mellor, 11 Jun 2009

NEC breakthrough paves way for powerless standy-by modes

NEC has announced the development of a memory circuit element that, it claims, will allow chips to consume no power when they're put in stand-by mode. The circuit component is a non-volatile magnetic flip-flop (MFF) - not a reference to cheap footwear but to a transistor-based circuit of the type assembled by schoolboys to …
Tony Smith, 05 Jan 2009
graph up

Seagate heading for the wild west

In a storage press event today, Seagate said it was going to produce a network-attached storage (NAS) product for the home and and a hard drive able to plug into a TV and play media content. Its coming enterprise solid state drive will combine single and multi-level cell technology and a second attempt at hybrid drives will be …
Chris Mellor, 04 Nov 2008

Start-up aims nanotube memory at iPods, phones and servers

SC07 The thought of introducing filthy carbon nanotubes into an ultra-sensitive fab has blocked the rise of so-called NRAM or Nano Random Access Memory. Thanks, however, to a refined cleansing process and relentless browbeating start-up Nantero thinks it has mainstream semiconductor players close to giving NRAM a try. In fact, the …
Ashlee Vance, 15 Nov 2007
The Register breaking news

Freescale serves up alternative to flash

Comment When Freescale recently announced a four megabit memory chip, my immediate reaction was to laugh. Magneto-resistive RAM - a technology which several aspirant companies have abandoned - has been announced in commercial form by Freescale, which is prepared to sell you a four megabit memory chip. It's been described as "an …
Guy Kewney, 17 Jul 2006
The Register breaking news

IBM, Infineon build 0.18µ magnetic RAM chip

'Instant on' computers moved a step closer today, according to IBM and Infineon claimed, thanks to the two companies' joint efforts to develop magnetic memory chips. Boffins from both companies believe Magnetic Random Access Memory (MRAM) could now come to market as early as 2005. To help bring that about, they will demonstrate …
Tony Smith, 10 Jun 2003
The Register breaking news

More on AMD and Palladium

HWRoundup Now then, now then, here's an interesting nugget fossicked by ExtremeTech reader and consultant Andreas Kuhn - a two-year old white paper "authored by AMD and encryption firm Wave Systems (which) may offer additional clues to the design of PCs incorporating Palladium, Microsoft's new security initiative." This "contains many …
Drew Cullen, 26 Jun 2002
The Register breaking news

Alphacide yesterday, Yamhill tomorrow: HP merger architect talks

If the name Shane Robison doesn't mean much to you, then take heart, because it had barely figured on our radar until yesterday. Robison has been described as "the man behind the curtain" in the SirCam merger by people we trust, and the HP CTO was instrumental in bringing HP and Compaq together - at one stage, he was one of …
Andrew Orlowski, 08 May 2002
The Register breaking news

Infineon samples low power Mobile-RAM for PDAs

Infineon has at last begun sampling the 128Mb Mobile-RAM chips - low power SDRAM parts developed specifically for PDA applications - that it announced last February. M-RAM samples had been scheduled to ship during Q2. The M-RAM chips draw only 20 per cent of the power consumed by a standard 3.3V 128Mb SDRAM part, the chip maker …
Tony Smith, 27 Jul 2001