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Micron plumps STACKED SILICON BEAUTY with SerDes

Avago tech for 3D NAND stack

Intelligent flash storage arrays

Chip-making chappies Micron are going to use Avago SerDes technology for their Hybrid Memory Cube, indicating the firm's on track with the 3D cube's development.

The Hybrid Memory Cube (HMC) has layers of memory cells stacked vertically, with conducting tunnels running between the individual layers called TSVs - “through silicon vias.”

A third generation draft spec has been released to HMC adopters.

The company is also looking at 3D NAND as a way of getting out of a NAND scaling trap. Sub-16nm cell geometries will increasingly ramp up bit error rates and decrease endurance, meaning it will becoming progressively harder - and then impossible - for a next-generation geometry shrink to produce flash chips better than the current cell geometry.

The use of 3D layering is a way to increase flash die footprint capacity without having to go to a post-flash technology, such as Resistive RAM or Phase Change Memory. No post-flash candidate technology is ready for the commercial big time yet.

Micron has licensed Avago’s 28nm Low Power 30Gbps Serializer/Deserializer (SerDes) IP. SerDes blocks serialise and deserialise sequential IO data into/out of parallel data – and in either direction. This is precisely how SerDes will be used in Micron's DRAM Memory cubes. ®

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