SanDisk readies 43-nanometer NAND Flash bash

Doubles density of its chips

By Austin Modine • Get more from this author

Posted in Storage, 6th February 2008 19:14 GMT

Free whitepaper – Standardization and Modularity in Network-Critical Physical Infrastructure

SanDisk is ready to begin mass-production of commercial flash memory using 43 nanometer process technology. Its latest shrinkage of chip features can double the density per chip compared to the previous 56nm process.

Shipments will start in the second half of 2008 with multi-level 16 and 32 Gb configurations. They'll be producing the chips at Fab 4, the new wafer facility SanDisk and Toshiba recently opened together in Yokkaichi, Japan. Toshiba was also in on developing the new process as well.

More with the old stuff too

SanDisk is also employing standard 56nm technology for production of three-bit-per-cell (x3) NAND flash memory between March and April this year.

The 16 Gb x3 NAND flash crams about 20 per cent more die per wafer compared to standard NAND 2-bits-per-cell on the same technology mode. SanDisk said this means better manufacturing efficiency and lower die costs for the same capital investment.

Let's close our little eyes tight and wish that it translates to lower prices in the near future. ®

Free whitepaper – Fundamental Principles of Generators for Information Technology