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Mosaid sues Infineon - again

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Ottawa, Canada-based chip technology developer Mosaid has sued Infineon, claiming the German memory maker has infringed three of its patents.

The intellectual property in question are US patents 6,657,919 and 6,057,676, and US Reissued Patent RE37,641, all covering DRAM chips and relating to delay locked loop, cell plate voltage and bit-line isolation methods. Mosaid maintains Infineon memory products available today incorporate technology detailed in these patents.

The lawsuit, filed with the US District Court of Eastern Texas, is the second one Mosaid has fired off at Infineon and the latest in a long line of legal fights picked with semiconductor makers.

Mosaid is currently facing Infineon in the New Jersey court, where this week it was told that Infineon had not infringed six of seven patents it had accused the memory maker of using without its say-so. The court did not comment on whether Infineon had infringed the seventh patent, 6,603,703, or not. The case is expected to return to the California court, Mosaid said.

Mosaid recently settled with Hynix after filing a complaint against the South Korean company in January. The terms of the settlement were not disclosed, but Hynix does come away with a six-year licence for the patents it was alleged to have infringed.

In January, Mosaid settled similar legal action brought against Samsung in September 2001. It has also reached settlements with Fujitsu, NEC, Toshiba, Hitachi and Sony. ®

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Infineon and Rambus kiss and make up
Mosaid, Hynix settle patent spat
Hynix infringed 50 Rambus patent claims - judge
Rambus sues four for GDDR 'infringement'
Mosaid sues Hynix

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