Hynix has begun mass-producing 0.10 micron SDRAM chips, the company said yesterday.

First on offer are 512Mb DDR and DDR 2 parts, with a 1Gb DDR 2 chip to following in the second half of the year. And 512Mb NAND Flash chips may be fabbed using the process later this year too.

By the end of the year, some 20 per cent of the Korean chip maker's output will be fabbed at 0.10 micron.

The announcement follows criticism from analysts last year that Hynix was falling behind its competitors in the adoption of the latest process technologies. Yesterday's announcement is proof they were wrong, the company said. ®