Samsung to show off 4Gb DRAMs

And introduces .18 micron technology

South Korean DRAM giant Samsung is expected to announce early December that it is close to achieving the ability to manufacture 4Gb memories. And yesterday the company said that it had successfully created a .18µ (micron) process technology for 256Mb and 1Gb parts. Samsung is not expected to be able to produce 4Gb memories for two or three more years, but the breakthrough will displace former technologies by the middle of the next decade. The .18µ technology is, however, close to completion and Samsung will produce 256Mb DRAMs early next year. ®

Sponsored: Designing and building an open ITOA architecture