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Hyundai claims ferrous RAM breakthrough

Chip will have low power consumption, high speed

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Hyundai has claimed a breakthrough in the creation of memory chip with ferro-electric properties. The 256Kbit FeRAM is based on metal rather than silicon technology, and can operate at three volts, provide fast performance but is also relatively inexpensive to manufacture. The FeRAM is the result of a joint venture between Hyundai and US companies Symetrix and Celis, according to reports. The devices, because of their low power consumption, will be used for mobile applications, including notebooks, PDAs and telephones, where battery life is at a premium. ®

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